6寸单晶硅片技术参数 /类型:p side/尺寸:125*125±0.4mm /直径:φ150±0.4mm /厚度: 200±20μm /电阻率:1.0–3.0ω?cm /少子寿命≥10μs content/氧含量≤1×1018atoms/cm3 content/碳含量≤5×1016atoms/cm3 /弯曲度:≤30μm : ≤35μm pit/位错密度:≤1000/cm3 orientation/表面、边缘晶向:<100>±1.0 defect/崩边:length/长度≤0.4mm、depth/深度≤0.8mm,每片不超过2个(no more than 2 per piece wafer),间隔space≥30mm /缺口:length/长度≤1mm、depth/深度≤0.3mm,每片≤1个(no more than 1 per piece wafer) 15.晶片无裂纹、孔洞和明显刀痕及凹坑 no crack, hole, obvious sawmarks and concave.